Open AccessDevelopment of solar-blind photodetectors based on Si-implanted β-Ga_2O_3
Author(s) -
Sangwoo Oh,
Younghun Jung,
Michael A. Mastro,
Jennifer K. Hite,
Charles R. Eddy,
Jihyun Kim
Publication year - 2015
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.23.028300
Subject(s) - photodetector , materials science , ohmic contact , raman spectroscopy , optoelectronics , chemical vapor deposition , thin film , dark current , annealing (glass) , silicon , electrode , optics , nanotechnology , chemistry , physics , layer (electronics) , composite material
β-Ga(2)O(3) films grown on Al(2)O(3) by a metalorganic chemical vapor deposition technique were used to fabricate a solar-blind photodetector with a planar photoconductor structure. The crystal structure and quality of the β-Ga(2)O(3) films were analyzed using X-ray diffraction and micro-Raman spectroscopy. Si ions were introduced into the β-Ga(2)O(3) thin films by ion implantation method and activated by an annealing process to form an Ohmic contact between the Ti/Au electrode and the β-Ga(2)O(3) film. The electrical conductivity of the β-Ga(2)O(3) films was greatly improved by the implantation and subsequent activation of the Si ions. The photoresponse properties of the photodetectors were investigated by analyzing the current-voltage characteristics and the time-dependent photoresponse curves. The fabricated solar-blind photodetectors exhibited photoresponse to 254 nm wavelength, and blindness to 365 nm light, with a high spectral selectivity.