Open AccessHighly spectrum-selective ultraviolet photodetector based on p-NiO/n-IGZO thin film heterojunction structure
Author(s) -
H. K. Li,
T. P. Chen,
Shaoxiang Hu,
X. D. Li,
Y. Liu,
Pooi See Lee,
X. P. Wang,
H. Y. Li,
GuoQiang Lo
Publication year - 2015
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.23.027683
Subject(s) - non blocking i/o , materials science , thin film , ultraviolet , nickel oxide , photodetector , optoelectronics , sputter deposition , heterojunction , layer (electronics) , optics , sputtering , nickel , nanotechnology , chemistry , metallurgy , biochemistry , physics , catalysis
Ultraviolet photodetector with p-n heterojunction is fabricated by magnetron sputtering deposition of n-type indium gallium zinc oxide (n-IGZO) and p-type nickel oxide (p-NiO) thin films on ITO glass. The performance of the photodetector is largely affected by the conductivity of the p-NiO thin film, which can be controlled by varying the oxygen partial pressure during the deposition of the p-NiO thin film. A highly spectrum-selective ultraviolet photodetector has been achieved with the p-NiO layer with a high conductivity. The results can be explained in terms of the "optically-filtering" function of the NiO layer.