Open AccessInGaP/GaAs heterojunction phototransistors transferred to a Si substrate by metal wafer bonding combined with epitaxial lift-off
Author(s) -
Minsu Park,
DaeMyeong Geum,
Jihoon Kyhm,
Jin Dong Song,
Sang-Hyeon Kim,
Won Jun Choi
Publication year - 2015
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.23.026888
Subject(s) - materials science , epitaxy , optoelectronics , wafer , heterojunction , wafer bonding , scanning electron microscope , substrate (aquarium) , direct bonding , layer (electronics) , gallium arsenide , photoluminescence , silicon , optics , nanotechnology , oceanography , physics , geology , composite material
We report fabrication and optical characteristics of an InGaP/GaAs heterojunction phototransistor (HPT) transferred to a Si substrate by a metal wafer bonding (MWB) and epitaxial lift-off (ELO) process at room temperature. An intermediate Pt/Au double layer between the HPT layer and Si provided a very smooth surface by which to achieve the MWB, and excellent durability against the acid solution during the ELO process. These processes were observed using scanning electron microscope (SEM) and atomic force microscopy (AFM). While the results on a low temperature photoluminescence (LTPL) signal and high resolution x-ray diffraction (HRXRD) rocking curve of the bonded device film implied a defect-free bonding, a very low collector dark current of the fabricated HPT was observed. The optical performance of a bonded InGaP/GaAs HPT on Si, operating at 635 nm wavelength is also investigated.