Optical emission generated from silicon under dual-wavelength femtosecond double-pulse laser irradiation | Zendy

Anmin Chen | Zendy; Ying Wang | Zendy; Laizhi Sui | Zendy; Suyu Li | Zendy; Shuchang Li | Zendy; Dunli Liu | Zendy; Yuanfei Jiang | Zendy; Mingxing Jin | Zendy

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Optical emission generated from silicon under dual-wavelength femtosecond double-pulse laser irradiation

Author(s) -

Anmin Chen,

Ying Wang,

Laizhi Sui,

Suyu Li,

Shuchang Li,

Dunli Liu,

Yuanfei Jiang,

Mingxing Jin

Publication year - 2015

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.23.024648

Subject(s) - femtosecond , materials science , laser , optics , wavelength , femtosecond pulse shaping , laser induced breakdown spectroscopy , x ray laser , optoelectronics , spectroscopy , laser power scaling , physics , quantum mechanics

In femtosecond double-pulse laser-induced breakdown spectroscopy, collinear double-pulse performance is investigated experimentally using various laser wavelength combinations of 800 nm and 400 nm Ti: sapphire lasers. The induced plasma emission line collected by BK7 lenses is the Si (I) at 390.55 nm. The double-pulse time separation ranges from -300 ps to 300 ps. The line intensity is dependent on the time separation of the dual-wavelength femtosecond double-pulse, and its behavior is unlike that of single-wavelength femtosecond double-pulses. Optical emission intensity can be enhanced by selecting appropriate time separation between sub-pulses. This result is particularly advantageous in the context of femtosecond laser-induced breakdown spectroscopy.

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