Open AccessOptical emission generated from silicon under dual-wavelength femtosecond double-pulse laser irradiation
Author(s) -
Anmin Chen,
Ying Wang,
Laizhi Sui,
Suyu Li,
Shuchang Li,
Dunli Liu,
Yuanfei Jiang,
Jin Mu
Publication year - 2015
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.23.024648
Subject(s) - femtosecond , materials science , laser , optics , wavelength , femtosecond pulse shaping , laser induced breakdown spectroscopy , x ray laser , optoelectronics , spectroscopy , laser power scaling , physics , quantum mechanics
In femtosecond double-pulse laser-induced breakdown spectroscopy, collinear double-pulse performance is investigated experimentally using various laser wavelength combinations of 800 nm and 400 nm Ti: sapphire lasers. The induced plasma emission line collected by BK7 lenses is the Si (I) at 390.55 nm. The double-pulse time separation ranges from -300 ps to 300 ps. The line intensity is dependent on the time separation of the dual-wavelength femtosecond double-pulse, and its behavior is unlike that of single-wavelength femtosecond double-pulses. Optical emission intensity can be enhanced by selecting appropriate time separation between sub-pulses. This result is particularly advantageous in the context of femtosecond laser-induced breakdown spectroscopy.