Open AccessMagnetically modulated laser-induced resistance effect observed in Metal-Oxide-Semiconductor structure of Cr/SiO_2/Si
Author(s) -
Xin Xie,
Shuai Liu,
Meizhen Huang,
Hui Wang
Publication year - 2015
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.23.024290
Subject(s) - materials science , laser , semiconductor , lorentz force , irradiation , perpendicular , optics , metal , photoelectric effect , magnetic field , oxide , optoelectronics , physics , geometry , mathematics , quantum mechanics , nuclear physics , metallurgy
In this study, we report our finding of laser-induced resistance effect in metal-oxide-semiconductor (MOS) structure of Cr/SiO(2)/Si. Under the irradiation of a laser beam, the effect shows a large linear resistance change ratio of 92% with a spatial sensitivity of 0.79 MΩ/mm. In particular, by the application of an external magnetic field perpendicular to the Cr film, the resistance change ratio is increased to 110%. This effect is attributed to the Lorentz force acting on the photo-generated carriers in the inversion layer of MOS structures. The work suggests an approach for the development of new type magnetically modulated photoelectric devices.