Open AccessHigh-power dual-fed traveling wave photodetector circuits in silicon photonics
Author(s) -
ChiaMing Chang,
J.H. Sinsky,
Po Dong,
G. de Valicourt,
Young-Kai Chen
Publication year - 2015
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.23.022857
Subject(s) - photodetector , photonics , electronic circuit , photocurrent , optical power , broadband , optics , optoelectronics , bandwidth (computing) , physics , photonic integrated circuit , telecommunications , computer science , laser , quantum mechanics
We introduce the concept of dual-illuminated photodetectors for high-power applications. Illuminating the photodetector on both sides doubles the number of optical channels, boosting DC and RF power handling capability. This concept is demonstrated utilizing multiple-stage dual-illuminated traveling wave photodetector circuits in silicon photonics, showing a maximum DC photocurrent of 112 mA and a 3-dB bandwidth of 40 GHz at 0.3 mA. Peak continuous-wave RF power is generated up to 12.3 dBm at 2 GHz and 5.3 dBm at 40 GHz, at a DC photocurrent of 55 mA. High speed broadband data signals are detected with eye amplitudes of 2.2 V and 1.3 V at 10 Gb/s and 40 Gb/s, respectively. A theoretical analysis is presented illustrating design tradeoffs for the multiple-stage photodetector circuits based on the bandwidth and power requirements.