Open AccessIntra-cavity frequency-doubled mode-locked semiconductor disk laser at 325 nm
Author(s) -
Roman Bek,
Stefan V. Baumgartner,
Fabian Sauter,
Hermann Kahle,
Thomas Schwarzbäck,
Michael Jetter,
Peter Michler
Publication year - 2015
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.23.019947
Subject(s) - optics , disk laser , materials science , laser , semiconductor , semiconductor laser theory , optoelectronics , full width at half maximum , mode locking , physics
We present a passively mode-locked semiconductor disk laser (SDL) emitting at 650nm with intra-cavity second harmonic generation to the ultraviolet (UV) spectral range. Both the gain and the absorber structure contain InP quantum dots (QDs) as active material. In a v-shaped cavity using the semiconductor samples as end mirrors, a beta barium borate (BBO) crystal is placed in front of the semiconductor saturable absorber mirror (SESAM) for pulsed UV laser emission in one of the two outcoupled beams. Autocorrelation (AC) measurements at the fundamental wavelength reveal a FWHM pulse duration of 1.22ps. With a repetition frequency of 836MHz, the average output power is 10mW per beam for the red emission and 0.5mW at 325nm.