Open AccessSaturation of 640-nm absorption in Cr^4+:YAG for an InGaN laser diode pumped passively Q-switched Pr^3+:YLF laser
Author(s) -
Hiroki Tanaka,
Ryosuke Kariyama,
Kazutoshi Iijima,
Kenichi Hirosawa,
Fumihiko Kannari
Publication year - 2015
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.23.019382
Subject(s) - saturable absorption , materials science , laser , optics , excited state , absorption (acoustics) , diode , saturation (graph theory) , tunable diode laser absorption spectroscopy , q switching , optoelectronics , ultrafast laser spectroscopy , atomic physics , fiber laser , physics , mathematics , combinatorics , composite material
We measure the absorption recovery time, the ground- and excited-state absorption cross sections of a Cr4+:YAG crystal at 640 nm for the first time. A pump-probe measurement reveals the existence of two recovery times of 26 ns and 5.6 μs. By a Z-scan experiment, the ground- and excited-state absorption cross sections are estimated to be 1.70 - 1.75 × 10(-17) and 0.95 - 1.00 × 10(-17)cm2, respectively. The adequacy of the proposed model and the accuracy of the estimated parameters of the saturable absorber are verified by reproducing the experimentally obtained performance of a passively Q-switched Pr3+:YLF laser with the Cr4+:YAG saturable absorber from rate equation analysis.