Open AccessBroadband tunable InAs/InP quantum dot external-cavity laser emitting around 155 μm
Author(s) -
Fei Gao,
Shuai Luo,
Hao Ji,
Xiaoguang Yang,
Liang Pan,
Tao Yang
Publication year - 2015
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.23.018493
Subject(s) - materials science , quantum dot , optoelectronics , laser , broadband , reflection (computer programming) , optics , wavelength , epitaxy , chemical vapor deposition , quantum dot laser , semiconductor laser theory , semiconductor , nanotechnology , physics , layer (electronics) , computer science , programming language
We report a broadband tunable external-cavity laser based on InAs/InP quantum dots (QDs) grown by metal-organic vapor phase epitaxy. It is found that high AsH₃ flow during the interruption after QD deposition greatly promotes QD ripening, which improves the optical gain of QD active medium in lower energy states. Combined with anti-reflection/high-reflection facet coatings, a broadly tunable InAs/InP QD external-cavity laser was realized with a tuning range of 140.4 nm across wavelengths from 1436.6 nm to 1577 nm at a maximum output power of 6 mW.