Broadband tunable InAs/InP quantum dot external-cavity laser emitting around 155 μm | Zendy

Fei Gao | Zendy; Shezhou Luo | Zendy; Hao Ji | Zendy; Xiaoguang Yang | Zendy; Ping Liang | Zendy; Tao Yang | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Broadband tunable InAs/InP quantum dot external-cavity laser emitting around 155 μm

Author(s) -

Fei Gao,

Shezhou Luo,

Hao Ji,

Xiaoguang Yang,

Ping Liang,

Tao Yang

Publication year - 2015

Publication title -

optics express

Language(s) - Uncategorized

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.23.018493

Subject(s) - materials science , quantum dot , optoelectronics , laser , broadband , reflection (computer programming) , optics , wavelength , epitaxy , chemical vapor deposition , quantum dot laser , semiconductor laser theory , semiconductor , nanotechnology , physics , layer (electronics) , computer science , programming language

We report a broadband tunable external-cavity laser based on InAs/InP quantum dots (QDs) grown by metal-organic vapor phase epitaxy. It is found that high AsH₃ flow during the interruption after QD deposition greatly promotes QD ripening, which improves the optical gain of QD active medium in lower energy states. Combined with anti-reflection/high-reflection facet coatings, a broadly tunable InAs/InP QD external-cavity laser was realized with a tuning range of 140.4 nm across wavelengths from 1436.6 nm to 1577 nm at a maximum output power of 6 mW.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research