Open AccessUltra-compact 32 × 32 strictly-non-blocking Si-wire optical switch with fan-out LGA interposer
Author(s) -
Ken Tanizawa,
Keijiro Suzuki,
Munehiro Toyama,
Minoru Ohtsuka,
Naoki Yokoyama,
Kazuyuki Matsumaro,
Masayuki Seki,
Kazuki Koshino,
Toshio Sugaya,
Satoshi Suda,
Guangwei Cong,
T. Kimura,
Kazuhiro Ikeda,
Shu Namiki,
Hitoshi Kawashima
Publication year - 2015
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.23.017599
Subject(s) - interposer , materials science , insertion loss , crossover switch , optical switch , optics , immersion lithography , wafer , optoelectronics , lithography , ball grid array , flip chip , fabrication , chip , soldering , telecommunications , physics , resist , nanotechnology , computer science , medicine , etching (microfabrication) , adhesive , alternative medicine , layer (electronics) , pathology , composite material
We demonstrate a 32 × 32 path-independent-insertion-loss optical path switch that integrates 1024 thermooptic Mach-Zehnder switches and 961 intersections on a small, 11 × 25 mm2 die. The switch is fabricated on a 300-mm-diameter silicon-on-insulator wafer by a complementary metal-oxide semiconductor-compatible process with advanced ArF immersion lithography. For reliable electrical packaging, the switch chip is flip-chip bonded to a ceramic interposer that arranges the electrodes in a 0.5-mm pitch land grid array. The on-chip loss is measured to be 15.8 ± 1.0 dB, and successful switching is demonstrated for digital-coherent 43-Gb/s QPSK signals. The total crosstalk of the switch is estimated to be less than -20 dB at the center wavelength of 1545 nm. The bandwidth narrowing caused by dimensional errors that arise during fabrication is discussed.