Open AccessTemperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells
Author(s) -
W. Liu,
Degang Zhao,
Desheng Jiang,
P. Chen,
Z. S. Liu,
Jianjun Zhu,
Ming Shi,
Danyun Zhao,
X. Li,
J. P. Liu,
S. M. Zhang,
H. Wang,
Han Yang,
Y. T. Zhang,
Guotong Du
Publication year - 2015
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.23.015935
Subject(s) - photoluminescence , materials science , chemical vapor deposition , optoelectronics , spontaneous emission , quantum well , luminescence , optics , light emitting diode , diffraction , quantum efficiency , spectral line , physics , laser , astronomy
Three green light emitting InGaN/GaN multiple quantum well (MQW) structures with different In composition grown by metal-organic chemical vapor deposition are investigated by the X-ray diffraction and the temperature-dependent photoluminescence (PL) measurements. It is found that when the In composition increases in the InGaN/GaN MQWs, the PL spectral bandwidth may anomalously decrease with increasing temperature. The reduction of PL spectral bandwidth may be ascribed to the enhanced non-radiative recombination process which may lower the light emission efficiency of the localized luminescent centers with shallow localization energy in the high-In-content InGaN quantum wells and also cause a reduction of integrated PL intensity.