Open AccessAlGaAs/GaAs/InGaAs pnp-type vertical-cavity surface-emitting transistor-lasers
Author(s) -
X. D. Yu,
Carl Reuterskiöld-Hedlund,
Xingang Yu,
Chen Yang,
T. Zabel,
Mattias Hammar,
Muhammad Nadeem Akram
Publication year - 2015
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.23.015680
Subject(s) - materials science , optoelectronics , heterojunction bipolar transistor , bipolar junction transistor , transistor , heterojunction , gallium arsenide , laser , vertical cavity surface emitting laser , indium gallium arsenide , optics , voltage , electrical engineering , physics , engineering
We report on the design, fabrication and analysis of vertical-cavity surface-emitting transistor-lasers (T-VCSELs) based on the homogeneous integration of an InGaAs/GaAs VCSEL and an AlGaAs/GaAs pnp-heterojunction bipolar transistor (HBT). Epitaxial regrowth confinement, modulation doping, intracavity contacting and non-conducting mirrors are used to ensure a low-loss structure, and a variety of design variations are investigated for a proper internal biasing and current injection to ensure a wide operating range. Optimized devices show mW-range output power, mA-range base threshold current and high-temperature operation to at least 60°C with the transistor in its active mode of operation for base currents well beyond threshold. Current confinement schemes based on pnp-blocking layers or a buried tunnel junction are investigated as well as asymmetric current injection for reduced extrinsic resistances.