Passive Q-switching with GaAs or Bi-doped GaAs saturable absorber in Tm:LuAG laser operating at 2μm wavelength | Zendy

Lin Wu | Zendy; Dechun Li | Zendy; Shengzhi Zhao | Zendy; Kejian Yang | Zendy; Xiangyang Li | Zendy; Reng Wang | Zendy; Ji Liu | Zendy

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Passive Q-switching with GaAs or Bi-doped GaAs saturable absorber in Tm:LuAG laser operating at 2μm wavelength

Author(s) -

Lin Wu,

Dechun Li,

Shengzhi Zhao,

Kejian Yang,

Xiangyang Li,

Reng Wang,

Ji Liu

Publication year - 2015

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.23.015469

Subject(s) - saturable absorption , materials science , laser , optics , optoelectronics , q switching , doping , wafer , wavelength , diode , fiber laser , physics

We report the first demonstration of a diode pumped passively Q-switched Tm:LuAG laser near 2μm wavelength with Bi-doped or undoped GaAs wafer as saturable absorber. For Bi-doped GaAs saturable absorber, stable Q-switched pulses with duration of 63.3ns under a repetition rate of 132.7 kHz and pulse energy of 5.51μJ are generated. In comparison to the passively Q-switched laser with undoped GaAs saturable absorber, the laser with Bi-doped GaAs can produce shorter pulses and higher peak power at almost the same incident pump power. The results suggest that Bi-doped GaAs can be an attractive candidate of saturable absorber for Q-switched laser near 2μm wavelength.

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