
Tunability of two dimensional n-doped semiconductor photonic crystals based on the Faraday effect
Author(s) -
Arafa H. Aly,
Sahar A. ElNaggar,
Hussein A. Elsayed
Publication year - 2015
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.23.015038
Subject(s) - photonic crystal , faraday effect , photonics , semiconductor , materials science , optoelectronics , doping , optics , microwave , permittivity , magnetic field , plane wave expansion , plane wave expansion method , physics , dielectric , quantum mechanics
In this paper, we theoretically investigate the effect of an external magnetic field on the properties of photonic band structures in two-dimensional n-doped semiconductor photonic crystals. We used the frequency-dependent plane wave expansion method. The numerical results reveal that the external magnetic field has a significant effect on the permittivity of the semiconductor materials. Therefore, the photonic band structures can be strongly tuned and controlled. The proposed structure is a good candidate for many applications, including filters, switches, and modulators in optoelectronics and microwave devices.