Open AccessHigh gain Ga_2O_3 solar-blind photodetectors realized via a carrier multiplication process
Author(s) -
Guofeng Hu,
Chongxin Shan,
Nan Zhang,
Mingming Jiang,
Shuangpeng Wang,
Dezhen Shen
Publication year - 2015
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.23.013554
Subject(s) - photodetector , responsivity , optoelectronics , materials science , quantum efficiency , optics , wavelength , electrode , physics , quantum mechanics
Ga2O3 photodetectors with interdigitated electrodes have been designed and fabricated, and the Ga2O3 area exposed to illumination acts as the active layer of the photodetector, while the area covered by Au interdigital electrode provide an arena for carrier multiplication. The photodetectors show a maximum responsivity at around 255 nm and a cutoff wavelength of 260 nm, which lies in the solar-blind region. The responsivity of the photodetector reaches 17 A/W when the bias voltage is 20 V, which corresponds to a quantum efficiency of 8228%, amongst the best value ever reported in Ga2O3 film based solar-blind photodetectors.