Open AccessTheory of effect of near-infrared laser polarization direction on high-order terahertz sideband generation in semiconductors
Author(s) -
Houquan Liu,
Weilong She
Publication year - 2015
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.23.010680
Subject(s) - terahertz radiation , sideband , optics , laser , polarization (electrochemistry) , far infrared laser , optical rectification , terahertz spectroscopy and technology , materials science , semiconductor , infrared , optoelectronics , physics , nonlinear optics , microwave , chemistry , quantum mechanics
In a semiconductor illuminated by a strong terahertz (THz) field, the electron-hole pairs excited by linear polarized near-infrared (NIR) laser can recombine to emit high-order THz sideband. Previous experimental results have shown, under the same condition of excitation intensity, the polarization direction of the NIR laser could affect the sideband intensity. In this letter, we theoretically investigate the effect of the NIR laser polarization direction on high-order terahertz sideband generation in bulk GaAs.