Open AccessGaN-based photon-recycling green light-emitting diodes with vertical-conduction structure
Author(s) -
Jinn-Kong Sheu,
Fu Bang Chen,
Wei Yu Yen,
Yen Chin Wang,
Chun Nan Liu,
Yu Min Yeh,
Ming Lun Lee
Publication year - 2015
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.23.00a371
Subject(s) - light emitting diode , optoelectronics , materials science , diode , wafer , gallium nitride , sapphire , auger effect , quantum well , optics , laser , layer (electronics) , auger , nanotechnology , physics , atomic physics
A p-i-n structure with near-UV(n-UV) emitting InGaN/GaN multiple quantum well(MQW) structure stacked on a green unipolar InGaN/GaN MQW was epitaxially grown at the same sapphire substrate. Photon recycling green light-emitting diodes(LEDs) with vertical-conduction feature on silicon substrates were then fabricated by wafer bonding and laser lift-off techniques. The green InGaN/GaN QWs were pumped with n-UV light to reemit low-energy photons when the LEDs were electrically driven with a forward current. Efficiency droop is potentially insignificant compared with the direct green LEDs due to the increase of effective volume of active layer in the optically pumped green LEDs, i.e., light emitting no longer limited in the QWs nearest to the p-type region to cause severe Auger recombination and carrier overflow losses.