Open Access1310 nm hybrid InP/InGaAsP on silicon distributed feedback laser with high side-mode suppression ratio
Author(s) -
Hélène Duprez,
Antoine Descos,
Thomas Ferrotti,
Corrado Sciancalepore,
Christophe Jany,
Karim Hassan,
Christian Seassal,
Sylvie Menezo,
Badhise Ben Bakir
Publication year - 2015
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.23.008489
Subject(s) - materials science , silicon , optoelectronics , optics , fabrication , continuous wave , laser , adiabatic process , waveguide , distributed feedback laser , silicon photonics , wavelength , medicine , physics , alternative medicine , pathology , thermodynamics
We report on the design, fabrication and performance of a hetero-integrated III-V on silicon distributed feedback lasers (DFB) at 1310 nm based on direct bonding and adiabatic coupling. The continuous wave (CW) regime is achieved up to 55 °C as well as mode-hop-free operation with side-mode suppression ratio (SMSR) above 55 dB. At room temperature, the current threshold is 36 mA and the maximum coupled power in the silicon waveguide is 22 mW.