Precise localized thinning and vertical taper fabrication for silicon photonics using a modified local oxidation of silicon (LOCOS) fabrication process | Zendy

Guillaume Beaudin | Zendy; Ali Belarouci | Zendy; Vincent Aimez | Zendy

Open Access

Precise localized thinning and vertical taper fabrication for silicon photonics using a modified local oxidation of silicon (LOCOS) fabrication process

Author(s) -

Guillaume Beaudin,

Ali Belarouci,

Vincent Aimez

Publication year - 2015

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.23.004377

Subject(s) - fabrication , locos , materials science , silicon , silicon on insulator , silicon photonics , photonics , optoelectronics , hybrid silicon laser , optics , silicon nitride , medicine , alternative medicine , physics , pathology

This paper presents a method to locally fine tune silicon-on-insulator (SOI) device layer thickness for the fabrication of optimal silicon photonics devices. Very precise control of thickness can be achieved with a modified local oxidation of silicon (LOCOS) process. The fabrication process is robust, complementary metal-oxide-semiconductor (CMOS) compatible and has the advantage of creating vertical tapers (~5.3 µm long for ~210 nm of height) required for impedance matching between sections of different height. The technology is demonstrated by fabricating a TE-pass filter.

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