Open AccessPrecise localized thinning and vertical taper fabrication for silicon photonics using a modified local oxidation of silicon (LOCOS) fabrication process
Author(s) -
Guillaume Beaudin,
Ali Belarouci,
Vincent Aimez
Publication year - 2015
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.23.004377
Subject(s) - fabrication , locos , materials science , silicon , silicon on insulator , silicon photonics , photonics , optoelectronics , hybrid silicon laser , optics , silicon nitride , medicine , alternative medicine , physics , pathology
This paper presents a method to locally fine tune silicon-on-insulator (SOI) device layer thickness for the fabrication of optimal silicon photonics devices. Very precise control of thickness can be achieved with a modified local oxidation of silicon (LOCOS) process. The fabrication process is robust, complementary metal-oxide-semiconductor (CMOS) compatible and has the advantage of creating vertical tapers (~5.3 µm long for ~210 nm of height) required for impedance matching between sections of different height. The technology is demonstrated by fabricating a TE-pass filter.