Open AccessRaman shift and strain effect in high-Q photonic crystal silicon nanocavity
Author(s) -
Daiji Yamashita,
Yasushi Takahashi,
Tanemasa Asano,
Susumu Noda
Publication year - 2015
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.23.003951
Subject(s) - raman spectroscopy , materials science , photonic crystal , optics , laser , raman laser , terahertz radiation , optoelectronics , silicon , raman amplification , raman scattering , physics
We have precisely measured the Raman shift of photonic crystal silicon heterostructure nanocavities for Raman laser applications. We utilized a near-infrared excitation laser of wavelength 1.42 μm in order to avoid local sample heating and exploited two high-Q nanocavity modes to calibrate the Raman frequency. The measured Raman shift was 15.606 THz (520.71 cm(-1)) with a small uncertainty of 1.0 × 10(-3) THz. In addition, we investigated the compressive stress generated in a photonic crystal slab in which a ~5.1 × 10(-3) THz blue shift of the Raman peak and a slight warpage of the slab were observed. We also demonstrated that the stress could be eliminated by using a cantilever structure.