Open AccessNonradiative recombination — critical in choosing quantum well number for InGaN/GaN light-emitting diodes
Author(s) -
Yi Ping Zhang,
Zihui Zhang,
Wei Liu,
Swee Tiam Tan,
Zhen Gang Ju,
Xue Liang Zhang,
Jimmy Yun,
Lian Cheng Wang,
Zabu Kyaw,
Namig Hasanov,
Bin Zhu,
Shunpeng Lu,
Xiao Wei Sun,
Hilmi Volkan Demir
Publication year - 2014
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.23.000a31
Subject(s) - light emitting diode , optoelectronics , quantum well , materials science , optics , diode , spontaneous emission , gallium nitride , wide bandgap semiconductor , physics , laser , nanotechnology , layer (electronics)