
Contact poling of Rb:KTiOPO_4 using a micro-structured silicon electrode
Author(s) -
Hoda Kianirad,
Andrius Žukauskas,
Thomas Frisk,
Carlota Canalias,
Fredrik Laurell
Publication year - 2015
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.23.000636
Subject(s) - poling , materials science , electrode , silicon , photolithography , grating , optoelectronics , optics , ferroelectricity , dielectric , chemistry , physics
A contact poling technique for domain engineering of ferroelectrics using a micro-structured silicon electrode is demonstrated on Rb:KTiOPO 4 . High quality QPM gratings were reproducibly fabricated. The silicon electrode is reusable and the technique potentially suitable when complex structures with sub-μm features are to be domain engineered, which otherwise is incompatible with conventional photolithography. A non-negligible domain broadening was seen and attributed to a low nucleation rate using this type of electrode. However, under the appropriate poling conditions, this could be exploited to obtain a QPM grating with a short pitch (2 μm), equal to half of the electrode period.