Open AccessRegularly patterned non-polar InGaN/GaN quantum-well nanorod light-emitting diode array
Author(s) -
Charng-Gan Tu,
CheHao Liao,
Yufeng Yao,
Horng-Shyang Chen,
ChingHsuan Lin,
Chia-Ying Su,
Pei-Ying Shih,
Wei-Han Chen,
Erwin Zhu,
YeanWoei Kiang,
C. C. Yang
Publication year - 2014
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.22.0a1799
Subject(s) - materials science , quantum well , optoelectronics , light emitting diode , photoluminescence , indium gallium nitride , nanorod , indium , diode , optics , biasing , current density , gallium nitride , voltage , nanotechnology , physics , layer (electronics) , laser , quantum mechanics
The growth and process of a regularly patterned nanorod (NR)- light-emitting diode (LED) array with its emission from sidewall non-polar quantum wells (QWs) are demonstrated. A pyramidal un-doped GaN structure is intentionally formed at the NR top for minimizing the current flow through this portion of the NR such that the injection current can be effectively guided to the sidewall m-plane InGaN/GaN QWs for emission excitation by a conformal transparent conductor (GaZnO). The injected current density at a given applied voltage of the NR LED device is similar to that of a planar c-plane or m-plane LED. The blue-shift trend of NR LED output spectrum with increasing injection current is caused by the non-uniform distributions of QW width and indium content along the height on a sidewall. The photoluminescence spectral shift under reversed bias confirms that the emission of the fabricated NR LED comes from non-polar QWs.