Open AccessInfluence of black silicon surfaces on the performance of back-contacted back silicon heterojunction solar cells
Author(s) -
Johannes Ziegler,
Jan Haschke,
Thomas Käsebier,
Lars Korte,
Alexander Sprafke,
Ralf B. Wehrspohn
Publication year - 2014
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.22.0a1469
Subject(s) - black silicon , silicon , materials science , passivation , optoelectronics , etching (microfabrication) , heterojunction , solar cell , wafer , quantum efficiency , stack (abstract data type) , optics , layer (electronics) , nanotechnology , physics , computer science , programming language
The influence of different black silicon (b-Si) front side textures prepared by inductively coupled reactive ion etching (ICP-RIE) on the performance of back-contacted back silicon heterojunction (BCB-SHJ) solar cells is investigated in detail regarding their optical performance, black silicon surface passivation and internal quantum efficiency. Under optimized conditions the effective minority carrier lifetime measured on black silicon surfaces passivated with Al(2)O(3) can be higher than lifetimes measured for the SiO(2)/SiN(x) passivation stack used in the reference cells with standard KOH textures. However, to outperform the electrical current of silicon back-contact cells, the black silicon back-contact cell process needs to be optimized with aspect to chemical and thermal stability of the used dielectric layer combination on the cell.