Open AccessSingle chip super broadband InGaN/GaN LED enabled by nanostructured substrate
Author(s) -
Stuart Yin,
Chao Wang,
Wei Zhu,
Junlong Yao,
Jun Zou,
Xiaoyan Lin,
Claire Luo
Publication year - 2014
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.22.0a1380
Subject(s) - materials science , optoelectronics , light emitting diode , optics , broadband , sapphire , substrate (aquarium) , wavelength , indium gallium nitride , gallium nitride , laser , layer (electronics) , nanotechnology , physics , oceanography , geology
A new type of LED, single chip super broadband InGaN/GaN LED is presented in this paper. The LED is composed of an InGaN/GaN quantum well layer deposited on the nanostructured sapphire substrate, inscribed by femtosecond laser ablation. The super broadband emission is enabled due to the large variation of indium composition in a small local area so that different wavelengths can be emitted over a small area and the summation of these different emission wavelengths forms super broadband emission, which covers the entire visible spectral range. The result of this paper represents a major technological advance in white light LED lighting because it enables single chip white LED lighting without the need of phosphor down converter that can significantly improve the efficiency without the Stokes loss and reduce the cost.