Open AccessElectroluminescence enhancement in InGaN light-emitting diode during the electrical stressing process
Author(s) -
T. T. Chen,
C. P. Wang,
Han-Kuei Fu,
Pei Ting Chou,
Shang Ping Ying
Publication year - 2014
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.22.0a1328
Subject(s) - electroluminescence , materials science , light emitting diode , optoelectronics , quantum efficiency , voltage droop , diode , optics , voltage , composite material , physics , layer (electronics) , quantum mechanics , voltage divider
This study of the optoelectronic properties of blue light-emitting diodes under direct current stress. It is found that the electroluminescence intensity increases with duration of stress, and the efficiency droop curves illustrated that the peak-efficiency and the peak-efficiency-current increases and decreases, respectively. We hypothesize that these behaviors mainly result from the increased internal quantum efficiency.