Open AccessEffect of biaxial strain induced by piezoelectric PMN-PT on the upconversion photoluminescence of BaTiO_3:Yb/Er thin films
Author(s) -
Zhenping Wu,
Yang Zhang,
Gongxun Bai,
W.H. Tang,
J. Gao,
Jianhua Hao
Publication year - 2014
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.22.029014
Subject(s) - materials science , photon upconversion , photoluminescence , thin film , piezoelectricity , epitaxy , doping , diffraction , optoelectronics , optics , piezoelectric coefficient , dielectric , composite material , nanotechnology , physics , layer (electronics)
Thin films of Yb3+/Er3+ co-doped BaTiO3 (BTO:Yb/Er) have been epitaxially grown on piezoelectric Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) substrates. Biaxial strain can be effectively controlled by applying electric field on PMN-PT substrate. A reversible, in situ and dynamic modification of upconversion photoluminescence in BTO:Yb/Er film was observed via converse piezoelectric effect. Detailed analysis and in situ X-ray diffraction indicate that such modulations are possibly due to the change in the lattice deformation of the thin films. This result suggests an alternative method to rationally tune the upconversion emissions via strain engineering.