Open AccessInAs/GaAs quantum-dot superluminescent diodes monolithically grown on a Ge substrate
Author(s) -
Qi Jiang,
Mingchu Tang,
Siming Chen,
Jiang Wu,
A.J. Seeds,
Huiyun Liu
Publication year - 2014
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.22.023242
Subject(s) - optoelectronics , molecular beam epitaxy , quantum dot , materials science , superluminescent diode , diode , light emitting diode , gallium arsenide , substrate (aquarium) , bandwidth (computing) , optics , epitaxy , physics , nanotechnology , layer (electronics) , geology , computer science , computer network , oceanography
We report the first InAs/GaAs quantum-dot (QD) superluminescent diode (SLD) monolithically grown on a Ge substrate by molecular beam epitaxy. The QD SLD exhibits a 3 dB emission bandwidth of ~60 nm centered at 1252 nm with output power of 27 mW at room temperature. The 3 dB bandwidth is very stable over the temperature range from 20 °C to 100 °C, which highlights the potential for integration with high performance ICs.