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High-power quantum-dot tapered tunable external-cavity lasers based on chirped and unchirped structures
Author(s) -
Stephanie E. Haggett,
M. Krakowski,
Ivo Montrosset,
Maria Ana Cataluna
Publication year - 2014
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.22.022854
Subject(s) - laser , materials science , quantum dot laser , optoelectronics , optics , quantum dot , semiconductor laser theory , optical amplifier , amplifier , injection seeder , tunable laser , quantum well , semiconductor , physics , cmos
A high-power tunable external cavity laser configuration with a tapered quantum-dot semiconductor optical amplifier at its core is presented, enabling a record output power for a broadly tunable semiconductor laser source in the 1.2 - 1.3 µm spectral region. Two distinct optical amplifiers are investigated, using either chirped or unchirped quantum-dot structures, and their merits are compared, considering the combination of tunability and high output power generation. At 1230 nm, the chirped quantum-dot laser achieved a maximum power of 0.62 W and demonstrated nearly 100-nm tunability. The unchirped laser enabled a tunability range of 32 nm and at 1254 nm generated a maximum power of 0.97 W, representing a 22-fold increase in output power compared with similar narrow-ridge external-cavity lasers at the same current density.

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