Open AccessWavelength dependence of Pockels effect in strained silicon waveguides
Author(s) -
Pedro Damas,
Xavier Le Roux,
David Le Bourdais,
Éric Cassan,
Delphine MarrisMorini,
Nicolas Izard,
Thomas Maroutian,
Philippe Lecoeur,
Laurent Vivien
Publication year - 2014
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.22.022095
Subject(s) - materials science , optics , wavelength , waveguide , pockels effect , silicon , silicon nitride , optoelectronics , silicon photonics , refractive index , overlayer , physics , laser , condensed matter physics
We investigate the influence of the wavelength, within the 1.3μm-1.63μm range, on the second-order optical nonlinearity in silicon waveguides strained by a silicon nitride (Si₃N ₄) overlayer. The effective second-order optical susceptibility χxxy(2)¯ evolutions have been determined for 3 different waveguide widths 385 nm, 435 nm and 465 nm and it showed higher values for longer wavelengths and narrower waveguides. For wWG = 385 nm and λ = 1630 nm, we demonstrated χxxy(2)¯ as high as 336 ± 30 pm/V. An explanation based on the strain distribution within the waveguide and its overlap with optical mode is then given to justify the obtained results.