Open AccessInfluence and adjustment of carrier lifetimes in InGaAs/InAlAs photoconductive pulsed terahertz detectors: 6 THz bandwidth and 90dB dynamic range
Author(s) -
R. J. B. Dietz,
Björn Globisch,
H. Roehle,
D. Stanze,
Thorsten Göbel,
Martin Schell
Publication year - 2014
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.22.019411
Subject(s) - terahertz radiation , materials science , optoelectronics , dynamic range , photoconductivity , doping , detector , optics , molecular beam epitaxy , bandwidth (computing) , terahertz spectroscopy and technology , physics , epitaxy , telecommunications , layer (electronics) , computer science , composite material
We investigate the influence of Beryllium (Be) doping on the performance of photoconductive THz detectors based on molecular beam epitaxy (MBE) of low temperature (LT) grown In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As multilayer heterostructures (MLHS). We show how the optical excitation power affects carrier lifetime, detector signal, dynamic range and bandwidth in THz time domain spectroscopy (TDS) in dependence on Be-doping concentration. For optimal doping we measured a THz bandwidth in excess of 6 THz and a dynamic range of up to 90 dB.