Open AccessSingle CdTe microwire photodetectors grown by close-spaced sublimation method
Author(s) -
Gwangseok Yang,
Byung Jae Kim,
Dong Hwan Kim,
Jihyun Kim
Publication year - 2014
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.22.018843
Subject(s) - photodetector , sublimation (psychology) , materials science , cadmium telluride photovoltaics , optoelectronics , ultraviolet , semiconductor , optics , physics , psychology , psychotherapist
We demonstrate single CdTe microwire field-effect transistors (FETs) that are highly sensitive to ultraviolet (UV) light. Dense CdTe microwires were catalytically grown using a close-spaced sublimation system. Structural, morphological and transport properties in conjunction with the optoelectronic properties were systemically investigated. CdTe microwire FETs exhibited p-type behaviors with field-effect mobilities up to 1.1 × 10(-3) cm2 V(-1) s(-1). Optoelectronic properties of our CdTe microwire FETs were studied under dark and UV-illumination conditions, where photoresponse was highly dependent on the back-gate bias conditions. Our CdTe microwire FET-based photodetectors are promising for high-performance micro-optoelectronic applications.