Open AccessImproved performance of ZnO light-emitting devices by introducing a hole-injection layer
Author(s) -
Ying-Jie Lu,
Hongfei Li,
Chongxin Shan,
Binghui Li,
Dezhen Shen,
Ligong Zhang,
Siu Fung Yu
Publication year - 2014
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.22.017524
Subject(s) - light emitting diode , homojunction , materials science , optoelectronics , layer (electronics) , optics , doping , composite material , physics
ZnO p-n homojunction light-emitting devices (LEDs) have been fabricated, and by introducing a p-type GaN as the hole-injection layer, the output power of the LEDs can reach 18.5 μW when the drive current is 60 mA, which is almost three orders of magnitude larger than the pristine LEDs without the hole-injection layer. The improved performance can be attributed to the extra holes injected into the p-ZnO layer from the p-GaN hole-injection layer.