Open AccessSurface chemical and local electronic properties of Al_xGa_1-xN epi-layers grown by MOCVD
Author(s) -
Shuchang Wang,
Xiong Zhang,
Zhe Chuan Feng,
Yiping Cui
Publication year - 2014
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.22.017440
Subject(s) - x ray photoelectron spectroscopy , extended x ray absorption fine structure , materials science , gallium , metalorganic vapour phase epitaxy , chemical state , analytical chemistry (journal) , absorption spectroscopy , spectroscopy , xanes , chemical bond , bond length , absorption (acoustics) , electronic structure , x ray absorption spectroscopy , nitride , chemical composition , crystallography , optics , chemistry , layer (electronics) , nanotechnology , crystal structure , nuclear magnetic resonance , physics , epitaxy , composite material , chromatography , quantum mechanics , metallurgy , computational chemistry , organic chemistry
The surface chemical state and local electronic structure of Al(x)Ga(1-x)N (x = 0~0.45) epi-layers have been systematically investigated by X-ray photoelectron spectroscopy (XPS) and extended X-ray absorption fine structure (EXAFS) spectroscopy. The results show that the surface of Al(x)Ga(1-x)N is a composite of oxide and nitride of gallium and aluminum. In addition, it was identified that the Ga-O components were converted to Al-O components when the Al(x)Ga(1-x)N sample was exposed to air. The EXAFS analysis also reveals that the Ga-N and Ga-Al bond lengths are independent of the Al composition, whereas the Ga-Ga bond length is a function of Al composition.