Open AccessGraphene based low insertion loss electro-absorption modulator on SOI waveguide
Author(s) -
Muhammad Mohsin,
Daniel Schall,
Martin Otto,
A. Noculak,
Daniel Neumaier,
H. Kurz
Publication year - 2014
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.22.015292
Subject(s) - insertion loss , materials science , silicon on insulator , graphene , optical modulator , optoelectronics , electro absorption modulator , waveguide , optics , electro optic modulator , interferometry , modulation (music) , absorption (acoustics) , silicon , phase modulation , semiconductor , physics , nanotechnology , semiconductor laser theory , quantum dot laser , phase noise , acoustics , composite material
Graphene is considered a promising material for broadband opto-electronics because of its linear and gapless band structure. Its optical conductivity can be significantly tuned electrostatically by shifting the Fermi level. Using mentioned property, we experimentally demonstrate a graphene based electro-absorption modulator with very low insertion loss. The device is realized on a silicon on insulator (SOI) waveguide operating at 1550 nm wavelength. The modulator shows a modulation depth of 16 dB and an insertion loss of 3.3 dB, surpassing GeSi and previous graphene based absorption modulators and being comparable to silicon Mach-Zehnder interferometer based modulators.