Graphene based low insertion loss electro-absorption modulator on SOI waveguide | Zendy

Muhammad Mohsin | Zendy; Daniel Schall | Zendy; Martin Otto | Zendy; A. Noculak | Zendy; Daniel Neumaier | Zendy; H. Kurz | Zendy

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Graphene based low insertion loss electro-absorption modulator on SOI waveguide

Author(s) -

Muhammad Mohsin,

Daniel Schall,

Martin Otto,

A. Noculak,

Daniel Neumaier,

H. Kurz

Publication year - 2014

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.22.015292

Subject(s) - insertion loss , materials science , silicon on insulator , graphene , optical modulator , optoelectronics , electro absorption modulator , waveguide , optics , electro optic modulator , interferometry , modulation (music) , absorption (acoustics) , silicon , phase modulation , semiconductor , physics , nanotechnology , semiconductor laser theory , quantum dot laser , phase noise , acoustics , composite material

Graphene is considered a promising material for broadband opto-electronics because of its linear and gapless band structure. Its optical conductivity can be significantly tuned electrostatically by shifting the Fermi level. Using mentioned property, we experimentally demonstrate a graphene based electro-absorption modulator with very low insertion loss. The device is realized on a silicon on insulator (SOI) waveguide operating at 1550 nm wavelength. The modulator shows a modulation depth of 16 dB and an insertion loss of 3.3 dB, surpassing GeSi and previous graphene based absorption modulators and being comparable to silicon Mach-Zehnder interferometer based modulators.

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