Open AccessPassively Q-switched and mode-locked Nd:GGG laser with a Bi-doped GaAs saturable absorber
Author(s) -
Wen Cong,
Dechun Li,
Shengzhi Zhao,
Kejian Yang,
Xiangyang Li,
Hui Qiao,
Ji Liu
Publication year - 2014
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.22.014812
Subject(s) - saturable absorption , materials science , laser , wafer , doping , optics , optoelectronics , diode , mode locking , fiber laser , wavelength , physics
A simultaneously passively Q-switched and mode-locked (QML) Nd:GGG laser using a Bi-doped GaAs wafer as saturable absorber is accomplished for the first time. The Bi-doped GaAs wafer is fabricated by ion implantation and subsequent annealing. In comparison to the passively QML laser with GaAs, the QML laser with Bi-doped GaAs can generate more stable pulses with 99% modulation depth. The experiment results indicate that the Bi-doped GaAs could be an excellent saturable absorber for diode-pumped QML lasers.