Passively Q-switched and mode-locked Nd:GGG laser with a Bi-doped GaAs saturable absorber | Zendy

Wen Cong | Zendy; Dechun Li | Zendy; Shengzhi Zhao | Zendy; Kejian Yang | Zendy; Xiangyang Li | Zendy; Hui Qiao | Zendy; Ji Liu | Zendy

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Passively Q-switched and mode-locked Nd:GGG laser with a Bi-doped GaAs saturable absorber

Author(s) -

Wen Cong,

Dechun Li,

Shengzhi Zhao,

Kejian Yang,

Xiangyang Li,

Hui Qiao,

Ji Liu

Publication year - 2014

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.22.014812

Subject(s) - saturable absorption , materials science , laser , wafer , doping , optics , optoelectronics , diode , mode locking , fiber laser , wavelength , physics

A simultaneously passively Q-switched and mode-locked (QML) Nd:GGG laser using a Bi-doped GaAs wafer as saturable absorber is accomplished for the first time. The Bi-doped GaAs wafer is fabricated by ion implantation and subsequent annealing. In comparison to the passively QML laser with GaAs, the QML laser with Bi-doped GaAs can generate more stable pulses with 99% modulation depth. The experiment results indicate that the Bi-doped GaAs could be an excellent saturable absorber for diode-pumped QML lasers.

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