Open AccessQuasi-surface emission in vertical organic light-emitting transistors with network electrode
Author(s) -
ChangMin Keum,
In-Ho Lee,
Sin Hyung Lee,
Gyu Jeong Lee,
Min Hoi Kim
Publication year - 2014
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.22.014750
Subject(s) - materials science , electrode , optoelectronics , transistor , optics , aperture (computer memory) , voltage , physics , quantum mechanics , acoustics
We demonstrate a vertical-type organic light-emitting transistor (VOLET) with a network electrode of closed topology for quasi-surface emission. In our VOLET, the spatial distribution of the surface emission depends primarily on the relative scale of the aperture in the network electrode to the characteristic length for the charge carrier recombination. Due to the closed topology in the network of the source electrode, the charge transport and the resultant carrier recombination are substantially extended from individual network boundaries toward the corresponding aperture centers in the source electrode. The luminance was found to be well-controlled by the gate voltage through an organic semiconducting layer over the network source electrode.