Open AccessBonding III-V material to SOI with transparent and conductive ZnO film at low temperature
Author(s) -
Xinnan Huang,
Yonghao Gao,
Xiaoliang Xu
Publication year - 2014
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.22.014285
Subject(s) - materials science , transmittance , electrical conductor , silicon on insulator , layer (electronics) , adhesive , silicon , composite material , wire bonding , optoelectronics , optics , adhesive bonding , chip , physics , electrical engineering , engineering
A procedure of bonding III-V material to SOI at low temperature using conductive and transparent adhesive ZnO as intermediate layer is demonstrated. Bonding layer thickness of less than 100 nm was achieved in our experiment that guaranteed good light coupling efficiency between III-V and silicon. This bonding method showed good bonding strength with shear stress of 80 N/cm(2). The lowest resistance of the bonded samples was 48.9 Ω and the transmittance of the spin-coated ZnO layer was above 99%. This procedure is applicable for fabricating hybrid III-V/Si lasers.