Open AccessDiode-pumped 15-16 μm laser operation in Er^3+ doped YbAl_3(BO_3)_4 microchip
Author(s) -
Yujin Chen,
Yanfu Lin,
Yongqiang Zou,
Jianhua Huang,
Xinghong Gong,
Zhixun Luo,
Yidong Huang
Publication year - 2014
Publication title -
optics express
Language(s) - German
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.22.013969
Subject(s) - materials science , laser , optics , slope efficiency , saturable absorption , diode , crystal (programming language) , doping , attenuation coefficient , wavelength , laser diode , pulse duration , optoelectronics , continuous wave , active laser medium , laser pumping , absorption (acoustics) , laser power scaling , fiber laser , physics , computer science , programming language , composite material
Er3+ doped YbAl3(BO3)4 crystal with large absorption coefficient of 184 cm(-1) at pump wavelength of 976 nm is a promising microchip gain medium of 1.5-1.6 μm laser. End-pumped by a 976 nm diode laser, 1.5-1.6 μm continuous-wave laser with maximum output power of 220 mW and slope efficiency of 8.1% was obtained at incident pump power of 4.54 W in a c-cut 200-μm-thick Er:YbAl3(BO3)4 microchip. When a Co2+:Mg0.4Al2.4O4 crystal was used as the saturable absorber, 1521 nm passively Q-switched pulse laser with about 0.19 μJ energy, 265 ns duration, and 96 kHz repetition rate was realized.