Open AccessDirectly modulated buried heterostructure DFB laser on SiO_2/Si substrate fabricated by regrowth of InP using bonded active layer
Author(s) -
Shinji Matsuo,
T. Fujii,
Koichi Hasebe,
Koji Takeda,
Tomonari Sato,
Takaaki Kakitsuka
Publication year - 2014
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.22.012139
Subject(s) - materials science , optoelectronics , laser , substrate (aquarium) , heterojunction , layer (electronics) , active layer , fabrication , semiconductor laser theory , optics , distributed feedback laser , semiconductor , nanotechnology , thin film transistor , medicine , wavelength , oceanography , physics , alternative medicine , pathology , geology
We describe the growth of InP layer using an ultrathin III-V active layer that is directly bonded to SiO₂/Si substrate to fabricate a buried heterostructure (BH) laser. Using a 250-nm-thick bonded active layer, we succeeded in fabricating a BH distributed feedback (DFB) laser on SiO₂/Si substrate. The use of a lateral current injection structure is important for forming a p-i-n junction using bonded thin film. The fabricated DFB laser is directly modulated by a 25.8-Gbit/s NRZ signal at 50°C. These results indicate that our fabrication method is a promising way to fabricate high-efficiency lasers at a low cost.