Directly modulated buried heterostructure DFB laser on SiO_2/Si substrate fabricated by regrowth of InP using bonded active layer | Zendy

Shinji Matsuo | Zendy; Takuro Fujii | Zendy; Koichi Hasebe | Zendy; Koji Takeda | Zendy; Tomonari Sato | Zendy; Takaaki Kakitsuka | Zendy

Open Access

Directly modulated buried heterostructure DFB laser on SiO_2/Si substrate fabricated by regrowth of InP using bonded active layer

Author(s) -

Shinji Matsuo,

Takuro Fujii,

Koichi Hasebe,

Koji Takeda,

Tomonari Sato,

Takaaki Kakitsuka

Publication year - 2014

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.22.012139

Subject(s) - materials science , optoelectronics , laser , substrate (aquarium) , heterojunction , layer (electronics) , active layer , fabrication , semiconductor laser theory , optics , distributed feedback laser , semiconductor , nanotechnology , thin film transistor , medicine , wavelength , oceanography , physics , alternative medicine , pathology , geology

We describe the growth of InP layer using an ultrathin III-V active layer that is directly bonded to SiO₂/Si substrate to fabricate a buried heterostructure (BH) laser. Using a 250-nm-thick bonded active layer, we succeeded in fabricating a BH distributed feedback (DFB) laser on SiO₂/Si substrate. The use of a lateral current injection structure is important for forming a p-i-n junction using bonded thin film. The fabricated DFB laser is directly modulated by a 25.8-Gbit/s NRZ signal at 50°C. These results indicate that our fabrication method is a promising way to fabricate high-efficiency lasers at a low cost.

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