Lateral photovoltaic effect and electron transport observed in Cr nano-film | Zendy

Shuai Liu | Zendy; Xin Xie | Zendy; Hui Wang | Zendy

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Lateral photovoltaic effect and electron transport observed in Cr nano-film

Author(s) -

Shuai Liu,

Xin Xie,

Hui Wang

Publication year - 2014

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.22.011627

Subject(s) - materials science , optoelectronics , photovoltaic system , nano , semiconductor , electron , photovoltaic effect , optics , detector , voltage , dark current , nanotechnology , photodetector , electrical engineering , physics , quantum mechanics , composite material , engineering

Lateral photovoltaic effect (LPE) can be used in position-sensitive detectors (PSDs) and has a wide application in a variety of optical transducers and sensors. In this report, a large LPE with sensitivity of 42mV/mm is observed in metal-oxide-semiconductor (MOS) structure of Cr/SiO(2)/Si. Through measuring current-voltage characteristics, we find that electron transport property in dark plays a key role and an appropriate metal thickness is crucial for obtaining a large LPE. This result is useful for applications and may explore a way to study the electron transport mechanism in nano-films' MOS structures.

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