Open AccessLateral photovoltaic effect and electron transport observed in Cr nano-film
Author(s) -
Shuai Liu,
Xin Xie,
Hui Wang
Publication year - 2014
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.22.011627
Subject(s) - materials science , optoelectronics , photovoltaic system , semiconductor , nano , photovoltaic effect , electron , optics , voltage , detector , dark current , electron transport chain , oxide , nanotechnology , photodetector , physics , electrical engineering , chemistry , biochemistry , quantum mechanics , composite material , metallurgy , engineering
Lateral photovoltaic effect (LPE) can be used in position-sensitive detectors (PSDs) and has a wide application in a variety of optical transducers and sensors. In this report, a large LPE with sensitivity of 42mV/mm is observed in metal-oxide-semiconductor (MOS) structure of Cr/SiO(2)/Si. Through measuring current-voltage characteristics, we find that electron transport property in dark plays a key role and an appropriate metal thickness is crucial for obtaining a large LPE. This result is useful for applications and may explore a way to study the electron transport mechanism in nano-films' MOS structures.