13-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers | Zendy

Mingchu Tang | Zendy; Siming Chen | Zendy; Jiang Wu | Zendy; Qi Jiang | Zendy; V. G. Dorogan | Zendy; Mourad Benamara | Zendy; Yuriy I. Mazur | Zendy; Gregory J. Salamo | Zendy; A.J. Seeds | Zendy; Huiyun Liu | Zendy

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13-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers

Author(s) -

Mingchu Tang,

Siming Chen,

Jiang Wu,

Qi Jiang,

V. G. Dorogan,

Mourad Benamara,

Yuriy I. Mazur,

Gregory J. Salamo,

A.J. Seeds,

Huiyun Liu

Publication year - 2014

Publication title -

optics express

Language(s) - Uncategorized

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.22.011528

Subject(s) - materials science , optoelectronics , lasing threshold , superlattice , dislocation , gallium arsenide , laser , quantum dot , epitaxy , substrate (aquarium) , layer (electronics) , indium arsenide , quantum well , optics , nanotechnology , wavelength , physics , oceanography , geology , composite material

We compare InAlAs/GaAs and InGaAs/GaAs strained-layer superlattices (SLSs) as dislocation filter layers for 1.3-μm InAs/GaAs quantum-dot laser structures directly grown on Si substrates. InAlAs/GaAs SLSs are found to be more effective than InGaAs/GaAs SLSs in blocking the propagation of threading dislocations generated at the interface between the GaAs buffer layer and the Si substrate. Room-temperature lasing at ~1.27 μm with a threshold current density of 194 A/cm(2) and output power of ~77 mW has been demonstrated for broad-area lasers grown on Si substrates using InAlAs/GaAs dislocation filter layers.

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