Open AccessUltraviolet electroluminescence from hetero p-n junction between a single ZnO microsphere and p-GaN thin film
Author(s) -
Norihiro Tetsuyama,
Koshi Fusazaki,
Y. Mizokami,
Tetsuya Shimogaki,
Mitsuhiro Higashihata,
Daisuke Nakamura,
Tatsuo Okada
Publication year - 2014
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.22.010026
Subject(s) - materials science , electroluminescence , ultraviolet , optoelectronics , thin film , whispering gallery wave , optics , microsphere , ultraviolet light , nanotechnology , layer (electronics) , physics , resonator , chemical engineering , engineering
We report ultraviolet electroluminescence from a hetero p-n junction between a single ZnO microsphere and p-GaN thin film. ZnO microspheres, which have high crystalline quality, have been synthesized by ablating a ZnO sintered target. It was found that synthesized ZnO microspheres had a high-optical property and exhibit the laser action in the whispering gallery mode under pulsed optical pumping. A hetero p-n junction was formed between the single ZnO microsphere/ p-GaN thin film, and a good rectifying property with a turn-on voltage of approximately 6 V was observed in I-V characteristic across the junction. Ultraviolet and visible electroluminescence were observed under forward bias.