Open AccessGaN-based light-emitting diodes on graphene-coated flexible substrates
Author(s) -
Gwangseok Yang,
Younghun Jung,
Camilo Velez,
F. Ren,
S. J. Pearton,
Jihyun Kim
Publication year - 2014
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.22.00a812
Subject(s) - materials science , graphene , light emitting diode , optoelectronics , sheet resistance , chemical vapor deposition , transfer printing , transmittance , thin film , layer (electronics) , substrate (aquarium) , laser , sapphire , diode , electrical conductor , optics , nanotechnology , composite material , oceanography , physics , geology
We demonstrate GaN-based thin light-emitting diodes (LEDs) on flexible polymer and paper substrates covered with chemical vapor deposited graphene as a transparent-conductive layer. Thin LEDs were fabricated by lifting the sapphire substrate off by Excimer laser heating, followed by transfer of the LEDs to the flexible substrates. These substrates were coated with tri-layer graphene by a wet transfer method. Optical and electrical properties of thin laser lift-offed LEDs on the flexible substrates were characterized under both relaxed and strained conditions. The graphene on paper substrates remained conducting when the graphene/paper structure was folded. The high transmittance, low sheet resistance and high failure strain of the graphene make it an ideal candidate as the transparent and conductive layer in flexible optoelectronics.