Open AccessEffects of InGaN layer thickness of AlGaN/InGaN superlattice electron blocking layer on the overall efficiency and efficiency droops of GaN-based light emitting diodes
Author(s) -
Chun Ta Yu,
Wei Chih Lai,
Cheng Hsiung Yen,
Shoou Jinn Chang
Publication year - 2014
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.22.00a663
Subject(s) - materials science , light emitting diode , optoelectronics , superlattice , diode , quantum efficiency , layer (electronics) , optics , nanotechnology , physics
The operating voltage, light output power, and efficiency droops of GaN-based light emitting diodes (LEDs) were improved by introducing Mg-doped AlGaN/InGaN superlattice (SL) electron blocking layer (EBL). The thicker InGaN layers of AlGaN/InGaN SL EBL could have a larger effective electron potential height and lower effective hole potential height than that of AlGaN EBL. This thicker InGaN layer could prevent electron leakage into the p-region of LEDs and improve hole injection efficiency to achieve a higher light output power and less efficiency droops with the injection current. The low lateral resistivity of Mg-doped AlGaN/InGaN SL would have superior current spreading at high current injection.