Optoelectrical characteristics of green light-emitting diodes containing thick InGaN wells with digitally grown InN/GaN | Zendy

Chun-Ta Yu | Zendy; Wei-Chih Lai | Zendy; Cheng-Hsiung Yen | Zendy; HsuCheng Hsu | Zendy; ShoouJinn Chang | Zendy

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Optoelectrical characteristics of green light-emitting diodes containing thick InGaN wells with digitally grown InN/GaN

Author(s) -

Chun-Ta Yu,

Wei-Chih Lai,

Cheng-Hsiung Yen,

HsuCheng Hsu,

ShoouJinn Chang

Publication year - 2014

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.22.00a633

Subject(s) - light emitting diode , materials science , optoelectronics , photoluminescence , quantum well , diode , thin film , wide bandgap semiconductor , gallium nitride , optics , laser , nanotechnology , layer (electronics) , physics

Compared with conventionally grown thin InGaN wells, thick InGaN wells with digitally grown InN/GaN exhibit superior optical properties. The activation energy (48 meV) of thick InGaN wells (generated by digital InN/GaN growth from temperature-dependent integrated photoluminescence intensity) is larger than the activation energy (25 meV) of conventionally grown thin InGaN wells. Moreover, thick InGaN wells with digitally grown InN/GaN exhibit a smaller σ value (the degree of localization effects) of 19 meV than that of conventionally grown thin InGaN wells (23 meV). Compared with green light-emitting diodes (LEDs) with conventional thin InGaN wells, the improvement in 20-A/cm² output power for LEDs containing thick InGaN wells with digitally grown InN/GaN is approximately 23%.

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