Open AccessOptoelectrical characteristics of green light-emitting diodes containing thick InGaN wells with digitally grown InN/GaN
Author(s) -
Chun Ta Yu,
Wei Chih Lai,
Cheng Hsiung Yen,
Hsu Cheng Hsu,
Shoou Jinn Chang
Publication year - 2014
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.22.00a633
Subject(s) - light emitting diode , materials science , optoelectronics , photoluminescence , quantum well , diode , thin film , wide bandgap semiconductor , gallium nitride , optics , laser , nanotechnology , layer (electronics) , physics
Compared with conventionally grown thin InGaN wells, thick InGaN wells with digitally grown InN/GaN exhibit superior optical properties. The activation energy (48 meV) of thick InGaN wells (generated by digital InN/GaN growth from temperature-dependent integrated photoluminescence intensity) is larger than the activation energy (25 meV) of conventionally grown thin InGaN wells. Moreover, thick InGaN wells with digitally grown InN/GaN exhibit a smaller σ value (the degree of localization effects) of 19 meV than that of conventionally grown thin InGaN wells (23 meV). Compared with green light-emitting diodes (LEDs) with conventional thin InGaN wells, the improvement in 20-A/cm² output power for LEDs containing thick InGaN wells with digitally grown InN/GaN is approximately 23%.