Open AccessA novel integrated structure of thin film GaN LED with ultra-low thermal resistance
Author(s) -
Shih-Yi Wen,
Hung-Lieh Hu,
Yao-Jun Tsai,
Chia-Hao Hsu,
Re-Ching Lin,
Ray Hua Horng
Publication year - 2014
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.22.00a601
Subject(s) - materials science , optoelectronics , thermal resistance , thermal , thin film , chip , silicon , light emitting diode , junction temperature , optics , chip scale package , nanotechnology , computer science , telecommunications , physics , meteorology , wafer
This study proposes a novel packaging structure for vertical thin-GaN LED applications by integration of LED chip and silicon-based packaging process. The vertical thin film LED is directly mounted on package submount. The shortest thermal path structure from junction to package submount achieves the lowest thermal resistance of 1.65 K/W for LED package. Experimental results indicate that low thermal resistance significant improved forward current up to 4.6A with 1.125 × 1.125 mm² LED chip size.