Open AccessSwitchable double wavelength generating vertical external cavity surface-emitting laser
Author(s) -
J. Muszalski,
Artur Broda,
Artur Trajnerowicz,
Anna Wójcik-Jedlińska,
Robert P. Sarzała,
Michał Wasiak,
Piotr Gutowski,
Iwona Sankowska,
J. Kubacka-Traczyk,
Krystyna Gołaszewska-Malec
Publication year - 2014
Publication title -
optics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.22.006447
Subject(s) - optics , materials science , wavelength , laser , optoelectronics , quantum well , semiconductor laser theory , vertical cavity surface emitting laser , physics
Switchable, double wavelength generation is demonstrated from a single vertical external cavity surface-emitting laser chip. Power of ~0.5 W for two wavelengths λ≈967 nm and 1,018 nm i.e. within the spectral distance of 51 nm were registered. In the semiconductor heterostructure a single set of nominally identical quantum wells was enclosed in a single, two-mode resonant microcavity. The wavelength switching was induced by the change of the pump power. The increase or decrease of the pump power changes the active region temperature and thus tunes spectrally the gain spectrum to the one of two modes.