Open AccessStrain effect on the optical polarization properties of c-plane Al_026Ga_074N/GaN superlattices
Author(s) -
Shunfei Fan,
Zhixin Qin,
Chenguang He,
Xinqiang Wang,
Bo Shen,
Guoyi Zhang
Publication year - 2014
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.22.006322
Subject(s) - materials science , light emitting diode , superlattice , sapphire , optoelectronics , quantum well , polarization (electrochemistry) , optics , ultraviolet , diode , wide bandgap semiconductor , degree of polarization , laser , physics , chemistry , scattering
A new approach to realize ultraviolet (UV) light emitting diodes (LEDs) is using AlN/GaN or AlxGa1-xN/GaN SL structure as active layers. Effect of a uniaxial strain on the degree of polarization (DOP) of Al0.26Ga0.74N/GaN superlattices (SLs) grown on c-plane sapphire substrates has been investigated. Compared with AlN/AlxGa1-xN quantum wells, the DOP of the light emission from Al0.26Ga0.74N/GaN SLs shows an opposite variation tendency with in-plane strain and quantum confinement. The results would be helpful to the structural design of c-plane deep-UV and UVA LEDs to enhance surface emission.