Strain effect on the optical polarization properties of c-plane Al_026Ga_074N/GaN superlattices | Zendy

Shunfei Fan | Zendy; Zhixin Qin | Zendy; Chenguang He | Zendy; Xinqiang Wang | Zendy; Bo Shen | Zendy; Guoyi Zhang | Zendy

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Strain effect on the optical polarization properties of c-plane Al_026Ga_074N/GaN superlattices

Author(s) -

Shunfei Fan,

Zhixin Qin,

Chenguang He,

Xinqiang Wang,

Bo Shen,

Guoyi Zhang

Publication year - 2014

Publication title -

optics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.394

H-Index - 271

ISSN - 1094-4087

DOI - 10.1364/oe.22.006322

Subject(s) - materials science , light emitting diode , superlattice , sapphire , optoelectronics , quantum well , polarization (electrochemistry) , optics , ultraviolet , diode , wide bandgap semiconductor , degree of polarization , laser , physics , chemistry , scattering

A new approach to realize ultraviolet (UV) light emitting diodes (LEDs) is using AlN/GaN or AlxGa1-xN/GaN SL structure as active layers. Effect of a uniaxial strain on the degree of polarization (DOP) of Al0.26Ga0.74N/GaN superlattices (SLs) grown on c-plane sapphire substrates has been investigated. Compared with AlN/AlxGa1-xN quantum wells, the DOP of the light emission from Al0.26Ga0.74N/GaN SLs shows an opposite variation tendency with in-plane strain and quantum confinement. The results would be helpful to the structural design of c-plane deep-UV and UVA LEDs to enhance surface emission.

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