Open AccessDesign and numerical analysis of surface plasmon-enhanced fin Ge-Si light-emitting diode
Author(s) -
Intae Jeong,
Jooseong Kwon,
Changsoon Kim,
Young June Park
Publication year - 2014
Publication title -
optics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.394
H-Index - 271
ISSN - 1094-4087
DOI - 10.1364/oe.22.005927
Subject(s) - light emitting diode , optoelectronics , materials science , surface plasmon , diode , light emission , optics , germanium , plasmon , photonics , heterojunction , silicon , spontaneous emission , physics , laser
Heavily-doped strained germanium (Ge) can emit light efficiently thanks to its pseudo direct band gap characteristic. This makes Ge a good candidate for on-chip monolithic light sources in silicon (Si) photonics systems. We propose fin-shaped Ge-Si heterojunction light-emitting diode (LED) with metal gates, which can enhance light emission by coupling with surface plasmon resonant modes and modulate light emission from the LED. We verify these two aspects through numerical analysis and device simulations. We develop the method to find the optimal device structure and specific device dimensions to maximize the spontaneous emission rate enhancement. Also we find that the LED can be modulated by a gate voltage bias.